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| BYW82...BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Electrically equivalent diodes: BYW82 - 1N5624 BYW83 - 1N5625 BYW84 - 1N5626 BYW85 - 1N5627 94 9588 Applications Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYW82 BYW83 BYW84 BYW85 BYW86 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV PR ER i2*t Tj=Tstg Value 200 400 600 800 1000 100 18 3 1000 20 Unit V V V V V A A A W mJ A2*s C Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2*t-rating Junction and storage temperature range tp=10ms, half sinewave Tamb tp=20ms, half sinewave, Tj=175 C I(BR)R=1A, Tj=175C x65C 40 -65...+175 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 37.5mm Symbol RthJA RthJA Value 25 70 Unit K/W K/W Document Number 86051 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BYW82...BYW86 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time y Reverse recovery charge Test Conditions IF=3A VR=VRRM VR=VRRM, Tj=100C IR=100mA, tp/T=0.01, tp=0.3ms VR=0, f=0.47MHz IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms, VR=50V IF=1A, di/dt=5A/ms Type Symbol VF IR IR V(BR) CD trr trr Qrr Min Typ 0.1 5 65 2 3 6 Max 1.0 1 10 1600 100 4 6 10 Unit V mA mA V pF ms ms mC Characteristics (Tj = 25_C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 40 I FAV- Average Forward Current ( A ) 4 30 3 20 l 10 l 2 VR = VR RM f=1kHz RthJA=25K/W L=10mm 1 0 0 5 10 15 TL=constant 20 25 30 94 9564 0 0 40 80 120 160 200 Tamb - Ambient Temperature ( C ) 94 9563 l - Lead Length ( mm ) Figure 1. Max. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 1000 I FAV- Average Forward Current ( A ) 2.0 1.6 1.2 0.8 0.4 0 0 40 80 I R - Reverse Current ( mA ) VR = VR RM f=1kHz RthJA=70K/W PCB Scattering Limit 100 10 1 VR = VR RM 0 40 80 120 160 200 0.1 120 160 200 94 9566 94 9565 Tamb - Ambient Temperature ( C ) Tj - Junction Temperature ( C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 4. Reverse Current vs. Junction Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 86051 Rev. 2, 24-Jun-98 BYW82...BYW86 Vishay Telefunken 100 IF - Forward Current ( A ) Scattering Limit 10 CD - Diode Capacitance ( pF ) 3.0 94 9569 80 Tamb= 175C 60 1 Tamb= 25C 40 0.1 20 0.01 0 94 9567 0 0.6 1.2 1.8 2.4 0.1 1 10 100 VF - Forward Voltage ( V ) VR - Reverse Voltage ( V ) Figure 5. Max. Forward Current vs. Forward Voltage Figure 6. Typ. Diode Capacitance vs. Reverse Voltage Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 1 10-4 tp/T=0.01 VR RM=1000V RthJA=70K/W Tamb= 25C 45C 70C 100C 60C 10-3 10-2 10-1 100 101 10-1 94 9568 tp - Pulse Length ( s ) 101 IFRM - Repetitive Peak Forward Current ( A ) 100 Figure 7. Thermal Response Dimensions in mm Sintered Glass Case SOD 64 Weight max. 1.0 g Cathode Identification 4.3 max. technical drawings according to DIN specifications 1.35 max. 26 min. 4.2 max. 26 min. 94 9587 Document Number 86051 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BYW82...BYW86 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 86051 Rev. 2, 24-Jun-98 |
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